SL600H65TL - IGBT Module

General Description

Conditions VGE(th) Gate-Emitter Threshold Voltage IC = 2 mA, VCE = VGE VCE(sat) ICES IGES Cies Co

Key Features

z Short Circuit Rated 10μs z Low Saturation Voltage: VCE (sat) = 1.60V @ IC = 600A , TC=25℃ z Low Switching Loss z 100% RBSOA Tested（2×Ic） z Low Stray Inductance z Lead Free, Compliant with RoHS Requirement.

SL600H65TL igbt module by Slkor - Datasheet Preview

Datasheet Details

Part number	SL600H65TL
Manufacturer	Slkor
File Size	939.09 KB
Description	IGBT Module
Datasheet	SL600H65TL Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT Module SL600H 65TL Features： z Short Circuit Rated 10μs z Low Saturation Voltage: VCE (sat) = 1.60V @ IC = 600A , TC=25℃ z Low Switching Loss z 100% RBSOA Tested（2×Ic） z Low Stray Inductance z Lead Free, Compliant with RoHS Requirement Applications： z UPS z Servo Applications z High Power Converters z Motor Drives z Wind Turbines IGBT, Inverter Maximum Rated Values(TC=25℃Unless otherwise specified) VCES VGES IC ICM(1) tSC PD Collector-Emitter Blocking Voltage Gate-Emitter Voltage Continuous Collector Current Peak Collector Current Repetitive TC = 80℃, TC = 25℃ TJ = 175℃ Short Circuit Withstand Time Maximum Power Dissipation (IGBT) TC = 25℃ TJmax=175℃ 650 ±20 600 800 1200 >10 2540 V V A A A μs W www.slkormicro.