SDR1190
Key Features
- Low Reverse Leakage Current Single Chip Construction PIV to 600V Hermetically Sealed Low Thermal Resistance Higher Voltage Devices Up to 1400V Available* Fast and Ultra Fast Recovery Versions Available* For Reverse Polarity Add Suffix “R” Replacement for 1N1183, 1N1184, 1N1185, 1N1186, 1N1187, 1N1188, 1N1189, and 1N1190 TX, TXV, and S-Level Screening Available 2/
