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SSG200EF60E - 200 AMP N-CHANNEL IGBT

Key Features

  • Outstanding current capability Low on-state conductive losses Very simple gate drive design Improved SOA characterization Low input capacitance High reverse voltage rating available TX, TXV, S-Level screening available SYMBOL VCES VGES @ TC = 25ºC @ TC = 90ºC IC1 IC2 ICM ILM 4/ __ = Not Screened TX = TX Level TXV = TXV S = S Level.

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Datasheet Details

Part number SSG200EF60E
Manufacturer Solid States Devices
File Size 141.73 KB
Description 200 AMP N-CHANNEL IGBT
Datasheet download datasheet SSG200EF60E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SSG200EF60E www.DataSheet4U.com DESIGNER’S DATA SHEET Part Number/Ordering Information 1/ SSG200EF60E ___ └ Screening 2/ 200 AMP N-CHANNEL IGBT WITH ANTI-PARALLEL DIODE 600 VOLTS Features: • • • • • • • Outstanding current capability Low on-state conductive losses Very simple gate drive design Improved SOA characterization Low input capacitance High reverse voltage rating available TX, TXV, S-Level screening available SYMBOL VCES VGES @ TC = 25ºC @ TC = 90ºC IC1 IC2 ICM ILM 4/ __ = Not Screened TX = TX Level TXV = TXV S = S Level MAXIMUM RATINGS3/ Collector – Emitter Breakdown Voltage Gate – Emitter Voltage Max.