• Part: SMCTTA32N14A10
  • Description: Advanced Pulse Power Device N-MOS VCS
  • Manufacturer: Solidtron
  • Size: 706.75 KB
Download SMCTTA32N14A10 Datasheet PDF
Solidtron
SMCTTA32N14A10
SMCTTA32N14A10 is Advanced Pulse Power Device N-MOS VCS manufactured by Solidtron.
SMCT TA32N14A10 Advanced Pulse Power Device N-MOS VCS, Thin Pak TM Description This voltage controlled Solidtron (VCS) discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a Thin Pak TM, ceramic "chip-scale" hybrid. The VCS Features the high peak current capability and low On.. state voltage drop mon to SCR thyristors bined with extremely high d I/dt capability. This semiconductor is intended for the control of high power circuits with the use of very small amounts of input energy and is ideally suited for capacitor discharge applications. The Thin Pak TM Package is a perforated, metalized ceramic substrate attached to the silicon using 302o C solder. An epoxy underfill is applied to protect the high voltage termination from debris. All exterior metal surfaces are tinned with 63pb/37sn solder providing the user with a circuit ready part. It's small size and low profile make it extremely attractive to high d I/dt applications where stray series inductance must be kept to a minimum. Anode Bond Area Package Gate Return Bond Area Gate Bond Area Cathode Bond Area Thin Pak TM Schematic Symbol Anode (A) Features l l l l 1400V Peak Off-State Voltage 32A Continuous Rating 4k A Surge Current Capability >100k A/u Sec d I/dt Capability l l l l <100n Sec Turn-On Delay Low On-State Voltage MOS Gated Control Low Inductance Package Gate (G) Gate Return (GR) Cathode...