FEATURES
LOW NOISE: 1.2 NV/√HZ TYPICAL FAST SWITCHING Gate 3 DESCRIPTION
Gate leakages are typically 50pA at room temperatures. TX, TXV, and S-Level Screening Available - Consult Factory. Drain 2 4 Source 1 ORDERING GUIDE Part Number 2N4901, 2N4902, 2N4903 DESCRIPTION
-40V N-Channel JFET Case Bottom View 0.195 (4.95) 0.178 (4.52) .33) .32) 0) min ABSOLUTE MAXIMUM RATINGS
PARAMETER Reverse Gate Source and Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation SYM0B.2O3L0 (5.84) VR0GS.209 (5.31) IFG PD VALUE -40 UNIT V 50 0.100 (2.54)mA 18000.050 (1.27)mW Power Derating 0.050 (1.27) P 12 mW/°C Operatin0g.0Ju3nc0tio(n0T.7e6m)pemraatuxre TJ 2 -55 to 125 °C Storage Temperature TSTG 1 CD 45° 0.046 (1.17) P 0.036 (0.9CH1) Ltr Ø 0.021Q(0.53) 0.016 (0L.141) L2 CD CH LU LL 0.S0EA4TI8NG (1.22) 0.P0LA2TE8 (0.71) HD LC LD LL LD LU L1 HD L2 P Q α 12 TL CL TW r TW r 3 α TL LC 3 -65 to 150 °C 0.100 (2.54) 4 Dimensions Inches mm Min. Max. Min. Max. 0.178 0.195 4.52 4.95...
Solitron Devices
