2N5911
FEATURES
LOW NOISE: 4.0 NV/√HZ TYPICAL LOW LEAKAGE: 10PA TYPICAL LOW INPUT CAPACITANCE: 5.0 PF TYPICAL
DESCRIPTION
The -25V 2N5911 and 2N5912 JFET’s are targeted for wideband differential amplifiers. Gate leakages are less than 10p A at room temperatures. The TO-78 package is hermetically sealed and suitable for military applications. Custom specifications, matching, and packaging options are available. TX, TXV, and S-Level Screening Available
- Consult Factory.
Source
Case
5 6 Drain
Gate 3
Drain 2
Source
7 Gate
Bottom View
ORDERING GUIDE
Part Number 2N5911, 2N5912 Description
-25V Dual Matched N-Channel JFET
ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse Gate Source and Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Operating Junction Temperature Storage Temperature
SYMBOL VRGS IFG PD P
TJ TSTG
0.335 (8.51) 0.305 (7.75)
VALUE -25
UNIT
0.335 (8.51)
0.305 (7.75m) A
0.185 (24.5700)
0.165 (4.19)
4.3 m W m W/°C
0.040...
