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2N5911 - Dual Matched N-Channel JFET

Datasheet Summary

Description

The -25V 2N5911 and 2N5912 JFET’s are targeted for wideband differential amplifiers.

Gate leakages are less than 10pA at room temperatures.

The TO-78 package is hermetically sealed and suitable for military applications.

Features

  • LOW NOISE: 4.0 NV/√HZ.

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Datasheet Details

Part number 2N5911
Manufacturer Solitron Devices
File Size 105.94 KB
Description Dual Matched N-Channel JFET
Datasheet download datasheet 2N5911 Datasheet
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Full PDF Text Transcription

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2N5911 | 2N5912 Dual Matched N-Channel JFET - 1 FEATURES LOW NOISE: 4.0 NV/√HZ TYPICAL LOW LEAKAGE: 10PA TYPICAL LOW INPUT CAPACITANCE: 5.0 PF TYPICAL DESCRIPTION The -25V 2N5911 and 2N5912 JFET’s are targeted for wideband differential amplifiers. Gate leakages are less than 10pA at room temperatures. The TO-78 package is hermetically sealed and suitable for military applications. Custom specifications, matching, and packaging options are available. TX, TXV, and S-Level Screening Available - Consult Factory.
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