Datasheet Details
| Part number | SD11428 |
|---|---|
| Manufacturer | Solitron Devices |
| File Size | 90.57 KB |
| Description | 1200V Silicon Carbide IGBT |
| Datasheet | SD11428-SolitronDevices.pdf |
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Overview: SD11428 1200V Silicon Carbide IGBT - 1 KEY.
| Part number | SD11428 |
|---|---|
| Manufacturer | Solitron Devices |
| File Size | 90.57 KB |
| Description | 1200V Silicon Carbide IGBT |
| Datasheet | SD11428-SolitronDevices.pdf |
|
|
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1200V Silicon Carbide IGBT ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Emitter Voltage Gate-Emitter Voltage, Continuous Collector Current, Continuous Power dissipation Lead temperature (soldering, 10s) Junction Temperature (Tj) Storage Temperature Range Thermal resistance, junction-to-case dv/dt SYMBOL BVces Vge Ids (on) Pd TL Tj Tst Θjc VALUE 1200Vdc ±20Vdc 22Adc 165W +300°C TEST CONDITIONS Vge = OV, lC = 0.25mA +125°C -55°C to +125°C 0.75 °C/W 3V/ns Rg= 5Ω, di/dt <100A/µs) PACKAGE OUTLINE - TO-3 CD HT CH LL LD L1 SEATING PLATE MHS S1 PS1 PS 1 HR1 2 MHD HR Dimensions Ltr Inches mm Min.
Max.
Min.
| Part Number | Description |
|---|---|
| SD11461 | N-Channel Power MOSFET |
| SD11704 | 900V SiC N-Channel Power MOSFET |
| SD11705 | 1200V SiC N-Channel Power MOSFET |
| SD11707 | 1200V SiC N-Channel Power MOSFET |
| SD11710 | 700V SiC N-Channel Power MOSFET |
| SD11740 | 1200V SiC N-Channel Power MOSFET |
| SD11801 | 1200V Silicon Carbide Schottky Diode |
| SD11803 | 1200V 10A Silicon Carbide Schottky Diode |
| SD11806 | Dual 1200V Silicon Carbide Schottky Diode |
| SD11807 | 650V Silicon Carbide Schottky Diode |