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SD11428 - 1200V Silicon Carbide IGBT

General Description

1200V Silicon Carbide IGBT ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Emitter Voltage Gate-Emitter Voltage, Continuous Collector Current, Continuous Power dissipation Lead temperature (soldering, 10s) Junction Temperature (Tj) Storage Temperature Range Thermal resistance, junction-to-case dv/dt

Key Features

  • BVces 1200V Ids (on) @ 125°C 22A TO-3.

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Datasheet Details

Part number SD11428
Manufacturer Solitron Devices
File Size 90.57 KB
Description 1200V Silicon Carbide IGBT
Datasheet download datasheet SD11428 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SD11428 1200V Silicon Carbide IGBT - 1 KEY FEATURES BVces 1200V Ids (on) @ 125°C 22A TO-3 PACKAGE BENEFITS COMPACT, LIGHTWEIGHT DESIGN INCREASED POWER DENSITY C D1 G E APPLICATIONS AEROSPACE HIGH EFFICIENCY CONVERTERS & MOTOR DRIVES POWER SUPPLIES ORDERING GUIDE Part Number SD11428 Description 1200V Silicon Carbide IGBT ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Emitter Voltage Gate-Emitter Voltage, Continuous Collector Current, Continuous Power dissipation Lead temperature (soldering, 10s) Junction Temperature (Tj) Storage Temperature Range Thermal resistance, junction-to-case dv/dt SYMBOL BVces Vge Ids (on) Pd TL Tj Tst Θjc VALUE 1200Vdc ±20Vdc 22Adc 165W +300°C TEST CONDITIONS Vge = OV, lC = 0.25mA +125°C -55°C to +125°C 0.