SD11912 Overview
1 KS1 2 G1 3 Temp. Monitoring 4 Temp. Monitoring 5 G2 6 KS2 7 D2 8 S2 9 S1 10 D1 SD11912 SiC Dual MOSFET Power Module - 1 VDS = 1200V RDSon = 13mΩ ID = 105A @ TC.
SD11912 Key Features
- SUPERIOR SYSTEM EFFICIENCY DUE TO LOW SWITCHING AND CONDUCTIONS LOSSES OF SIC
- OUTSTANDING POWER CONVERSION EFFICIENCY AT HIGH FREQUENCY OPERATION
- HIGH SPEED SWITCHING W/ LOW CAPACITANCE
- REDUCED PARASITIC INDUCTANCE AND CAPACITANCE
- REAL KELVIN SOURCE CONNECTION FOR STABLE GATE DRIVE
- ISOLATED BACKSIDE FOR DIRECT MOUNT TO HEATSINK
- ALN SUBSTRATE AND CUMO BASEPLATE FOR THERMAL CONDUCTIVITY
- HIGH JUNCTION TEMPERATURE OPERATION
- LOW JUNCTION TO CASE THERMAL RESISTANCE
- REDUCED THERMAL REQUIREMENTS AND SYSTEM COST