SD11912
DESCRIPTION
KS1
G1
Temp. Monitoring
Temp. Monitoring
G2
KS2
D2
S2
S1
D1
Si C Dual MOSFET Power Module
- 1
VDS = 1200V
RDSon = 13mΩ
ID = 105A @ TC = 25°C
FEATURES
& BENEFITS
- SUPERIOR SYSTEM EFFICIENCY DUE TO LOW SWITCHING AND CONDUCTIONS LOSSES OF SIC
- OUTSTANDING POWER CONVERSION EFFICIENCY AT HIGH FREQUENCY OPERATION
- HIGH SPEED SWITCHING W/ LOW CAPACITANCE
- REDUCED PARASITIC INDUCTANCE AND CAPACITANCE
- REAL KELVIN SOURCE CONNECTION FOR STABLE GATE DRIVE
- ISOLATED BACKSIDE FOR DIRECT MOUNT TO HEATSINK
- ALN SUBSTRATE AND CUMO BASEPLATE FOR THERMAL CONDUCTIVITY
- HIGH JUNCTION TEMPERATURE OPERATION
- LOW JUNCTION TO CASE THERMAL RESISTANCE
- REDUCED THERMAL REQUIREMENTS AND SYSTEM COST
- INTEGRATED NTC TEMPERATURE SENSOR
- RUGGED MOUNTING DUE TO INTEGRATED MOUNTING...
