SD11957
DESCRIPTION
S1
G1
3 n/c
4 n/c
G2
S2
Si C Half-Bridge Power Module
- 1
VDS = 1200V
RDSon = 13mΩ
ID = 105A @ TC = 25°C
FEATURES
& BENEFITS
- SUPERIOR SYSTEM EFFICIENCY DUE TO LOW SWITCHING AND CONDUCTIONS LOSSES OF SIC
- OUTSTANDING POWER CONVERSION EFFICIENCY AT HIGH FREQUENCY OPERATION
- HIGH SPEED SWITCHING W/ LOW CAPACITANCE
- REDUCED PARASITIC INDUCTANCE AND CAPACITANCE
- REAL KELVIN SOURCE CONNECTION FOR STABLE GATE DRIVE
- ISOLATED BACKSIDE FOR DIRECT MOUNT TO HEATSINK
- ALN SUBSTRATE AND CUMO BASEPLATE FOR THERMAL CONDUCTIVITY
- HIGH JUNCTION TEMPERATURE OPERATION
- LOW JUNCTION TO CASE THERMAL RESISTANCE
- REDUCED THERMAL REQUIREMENTS AND SYSTEM COST
- RUGGED MOUNTING DUE TO INTEGRATED MOUNTING BUSHINGS
- LOW PROFILE PACT PACKAGE
CALL: +1 561-848-4311
.solitrondevices.
EMAIL: sales@solitrondevices.
Si C Half-Bridge Power Module
- 2
ABSOLUTE MAXIMIMUM RATINGS (TC = 25°C) SYMBOL CHARACTERISTIC
VDS,...
