Datasheet Details
| Part number | SMF404 |
|---|---|
| Manufacturer | Solitron Devices |
| File Size | 67.12 KB |
| Description | 1000V N-Channel Power MOSFET |
| Datasheet | SMF404-SolitronDevices.pdf |
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Overview: SMF404 1000V N-Channel Power MOSFET - 1 KEY.
| Part number | SMF404 |
|---|---|
| Manufacturer | Solitron Devices |
| File Size | 67.12 KB |
| Description | 1000V N-Channel Power MOSFET |
| Datasheet | SMF404-SolitronDevices.pdf |
|
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1000V N-Channel Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL VALUE Drain-Source Voltage VDSmax 1000V Gate-Source Voltage (dynamic) VGSM ±30V Gate-Source Voltage VGSS ±20V Drain Current, continous ID25 15A Drain Current, pulsed ID(PULSE) 40A Power Dissipation PD 280W Junction Temperature Range, Operating TJ Junction Temperature Range, Storage TSTG -55°C to 150°C TEST CONDITIONS VGS = 0V, ID = 100µA Transient Continuous TC = 25°C Pulse width Tp limited by TJmax TC = 25°C CALL: +1 561-848-4311 www.solitrondevices.com EMAIL: sales@solitrondevices.com SMF404 1000V N-Channel Power MOSFET - 2 ELECTRICAL SPECIFICATIONS (TJ = 25°C unless otherwise noted) Parameter Drain-Source Breakdown Voltage VGS = 0V, ID = 1mA Gate Threshold Voltage VDS = VGS, ID = 1mA, TJ = 25°C Off -State Drain Current VDS = 1000V, VGS = 0V, TJ = 25°C VDS = 1000V, VGS = 0V, TJ = 125°C Gate-Source Leakage Current Drain-Source On-state Resistance Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = ±20V, VDS = 0V VGS = >20V, ID = 7.5A, TJ = 25°C VDS = >20V, ID = 7.5A, TJ = 25°C VGS = 0V, VDS = 25V, f = 100kHz Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS = 10V, VDS = 0.5 x VDSS, IDS = 0.5 x ID25 Turn On Delay Time Rx Time Turn Off Delay Time Fail Time VGS = 10V, VDS = 0.5 x VDSS, IDS = 7.5 x ID25, RG = 2Ω (external) Thermal Resistance Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) Gfs Ciss Coss Crss Qg(on) Qgs Qgd td(on) tr td(off) tf RthJC Min.
1000 3.5 6.5 Typ.
760 8.5 5140 322 43 97 38 42 41 44 44 58 Max.
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