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CXG1010N - Power Amplifier for PHS

General Description

The CXG1010N is a power amplifier for PHS.

This IC is designed using the Sony’s GaAs J-FET process and operates at a single power supply.

Key Features

  • High output power 21.5 dBm.
  • Positive power supply drive VDD=3.4 V.
  • Low current consumption 200 mA.
  • High gain 40 dB Typ.
  • Low distortion (ACP).
  • 59 dBc Typ.
  • Small mold package 16-pin SSOP Structure GaAs J-FET MMIC 16 pin SSOP (Plastic) Absolute Maximum Ratings (Ta=25 °C) 6.
  • Supply voltage VDD.
  • Voltage between gate and source Vgs0 1.5.
  • Drain current IDD 500.
  • Power dissipation PD 3.
  • Channel.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CXG1010N Power Amplifier for PHS For the availability of this product, please contact the sales office. Description The CXG1010N is a power amplifier for PHS. This IC is designed using the Sony’s GaAs J-FET process and operates at a single power supply. Features • High output power 21.5 dBm • Positive power supply drive VDD=3.4 V • Low current consumption 200 mA • High gain 40 dB Typ. • Low distortion (ACP) –59 dBc Typ. • Small mold package 16-pin SSOP Structure GaAs J-FET MMIC 16 pin SSOP (Plastic) Absolute Maximum Ratings (Ta=25 °C) 6 • Supply voltage VDD • Voltage between gate and source Vgs0 1.