• Part: CXG1028ATN
  • Description: GSM900/1800/1900 SPDT TX/RX Switch
  • Manufacturer: Sony Semiconductor Solutions
  • Size: 81.85 KB
Download CXG1028ATN Datasheet PDF
Sony Semiconductor Solutions
CXG1028ATN
CXG1028ATN is GSM900/1800/1900 SPDT TX/RX Switch manufactured by Sony Semiconductor Solutions.
GSM900/1800/1900 SPDT TX/RX Switch Description The CXG1028ATN is a high power SPDT switch suitable for Digital Cellular applications. This device is part of a growing family of MMIC Antenna switches for digital cellular and cordless radios. It uses the state-of-the-art Sony Ga As JFET process. Features - Positive voltage supply only - Low insertion loss, typically 0.3d B at 34.5d Bm, 900MHz - Low Harmonics: - 64.5d Bc Max. at 34.5d Bm (Vctl = 5V, 25°C) - Stable Characteristics over wide temperature range - Fast switching-100ns Typical - Low current consumption, 190µA typical at 5V - 10 pin TSSOP package (3.2 × 2.8mm) Applications - GSM900 handportable applications - GSM1800 handportable - GSM1900 handportable - GSM900/1800/1900 Base station - Other digital cellular and wireless local loop applications Typical Application Internal Antenna 10 pin TSSOP (Plastic) ESD As with other Ga As semiconductors, ESD precautions must be adhered to. PA TX IN RX OUT LNA Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. - 1- E98527-PS Electrical Characteristics Measurement Conditions, unless otherwise stated:Ta = 25°C. Parameter Insertion loss Symbol IL CW Min. Typ. 0.3 0.5 20 22 17 1.2 ∗1 Output Harmonics 2fo,3fo ∗2 ∗1 Input Power for 0.2d B pression P0.2d B ∗2 ∗1 Input Power for 1d B pression Switching Speed TSW Control Current P1d B TSW ICTL ∗2 36 35 - 35 36 35 38 37 100 190 350 - 30 d Bm d Bm d Bm d Bm d Bm d Bm ns µA Max. 0.6 0.8 Unit d B d B d B d B ∗1, ∗3 ∗2, ∗4 ∗1, ∗3 Isolation VSWR ISO VSWR ∗2, ∗4 Condition ∗1 Pin = 34.5d Bm, 880 to 915MHz, 0/5V Control ∗2 Pin = 32d Bm, 1710 to 1785MHz, 0/5V Control ∗3 Pin = 10d Bm,...