Datasheet4U Logo Datasheet4U.com

CXG1030N - Power Amplifier

Datasheet Summary

Description

The CXG1030N is a power amplifier for PHS.

This IC is designed using the Sony’s GaAs J-FET process and operates at a single power supply.

Features

  • Output power 21 dBm.
  • Positive power supply 3.0 V.
  • Low current consumption 170 mA.
  • High power gain 39 dB Typ.
  • Small mold package 16-pin SSOP Structure GaAs J-FET MMIC 16 pin SSOP (Plastic) Absolute Maximum Ratings (Ta=25 °C).
  • Supply voltage VDD 6 V.
  • Voltage between gate and source Vgs0 1.5 V.
  • Drain current IDD 500 mA.
  • Power dissipation PD 3 W.
  • Channel temperature Tch 175 °C.
  • Operating temperature.

📥 Download Datasheet

Datasheet preview – CXG1030N

Datasheet Details

Part number CXG1030N
Manufacturer Sony Corporation
File Size 141.03 KB
Description Power Amplifier
Datasheet download datasheet CXG1030N Datasheet
Additional preview pages of the CXG1030N datasheet.

📁 Similar Datasheet

Other Datasheets by Sony Corporation
  • CXG1034TN - Receiving Mixer
  • CXG1039TN - High Isolation Absorptive SPDT Switch MMIC
  • CXG1006N - GSM900/1800/1900 SPDT TX/RX Switch
  • CXG1008N - High Isolation SPDT Switch
  • CXG1009TN - High Isolation SPDT Switch
  • CXG1010N - Power Amplifier for PHS
  • CXG1012N - High-Frequency SPDT Antenna Switch
  • CXG1013N - 1.7 to 2.0 GHz Low Noise Amplifier/Down Conversion Mixer

Full PDF Text Transcription

Click to expand full text
CXG1030N Power Amplifier for PHS Description The CXG1030N is a power amplifier for PHS. This IC is designed using the Sony’s GaAs J-FET process and operates at a single power supply. Features • Output power 21 dBm • Positive power supply 3.0 V • Low current consumption 170 mA • High power gain 39 dB Typ. • Small mold package 16-pin SSOP Structure GaAs J-FET MMIC 16 pin SSOP (Plastic) Absolute Maximum Ratings (Ta=25 °C) • Supply voltage VDD 6 V • Voltage between gate and source Vgs0 1.5 V • Drain current IDD 500 mA • Power dissipation PD 3 W • Channel temperature Tch 175 °C • Operating temperature Top –35 to +85 °C • Storage temperature Tstg –65 to +150 °C Electrical Characteristics VDD=3.0 V, VCTL=2.0 V, f=1.
Published: |