CXK58512TM Overview
The CXK58512TM/M is a high speed CMOS static RAM organized as 65536-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.
CXK58512TM Key Features
- Fast access time (Access time) -55LL 55ns (Max.) -70LL 70ns (Max.) -10LL 100ns (Max.)
- Low standby current 10µA (Max.)
- Low data retention current 6µA (Max.)
- Single +5V supply: +5V ± 10%
- Low voltage data retention: 2.0V (Min.)