CXK591000M Overview
The CXK591000TM/YM/M is a high speed CMOS static RAM organized as 131,072-words by 9 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.
CXK591000M Key Features
- Low standby current CXK591000TM/YM/M -55LL/70LL/10LL 24µA (Max.)
- Low data retention current CXK591000TM/YM/M -55LL/70LL/10LL 14µA (Max.)
- Single +5V supply: 5V ± 10%
- Low voltage date retention: 2.0V (Min.)