CXK591000M Datasheet | Sony Semiconductor Solutions

CXK591000TM/YM/M -55LL/70LL/10LL 131,072-word × 9-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description The CXK591000TM/YM/M is a high speed CMOS static RAM organized as 131,072-words by 9 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed. The CXK591000TM/YM/M is a suitable RAM for portable equipment with battery back up and parity bit. Features - Fast access time CXK591000TM/YM/M (Access time) -55LL 55ns (Max.) -70LL 70ns (Max.) -10LL 100ns (Max.) - Low standby current CXK591000TM/YM/M -55LL/70LL/10LL 24µA (Max.) - Low data retention current CXK591000TM/YM/M -55LL/70LL/10LL 14µA (Max.) - Single +5V supply: 5V ± 10%. - Low voltage date retention: 2.0V (Min.) - Broad package line-up CXK591000TM/YM 8mm × 20mm 32 pin TSOP Package CXK591000M 525mil 32 pin SOP Package Function 131072 word × 9 bit static RAM Structure Silicon gate CMOS IC CXK591000TM 32 pin TSOP (PIastic) CXK591000YM 32 pin TSOP (PIastic) CXK591000M 32 pin SOP (PIastic) Block Diagram A10 A11 A9 A8 A13 A15 A16 A14 A12 A7 Buffer Row Decoder Memory Matrix 1024 × 1152 VCC GND A6 A5 A4 A3 A2 A1 A0 OE WE CE1 CE2 Buffer I /O Gate Column Decoder Buffer I /O Buffer I/O1 I/O9 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. - 1- E93X06-PS CXK591000TM/YM/M Pin Configuration (Top View) A11 A9 A8 A13 WE CE2 A15 Vcc A16 A14 A12 A7 A6 A5 A4 A3 A3 A4 A5 A6 A7 A12 A14 A16 Vcc A15 CE2 WE A13 A8 A9 A11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 OE 31 A10 30 CE1 29 I/O9 28 I/O8 27 I/O7 Pin...