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CXK5T81000AYN - 131072-word X 8-bit High Speed CMOS Static RAM

Description

The CXK5T81000ATN/AYN is a high speed CMOS static RAM organized as 131072-words by 8-bits.

Special feature are low power consumption and high speed.

The CXK5T81000ATN/AYN is a suitable RAM for portable equipment with battery back up.

Features

  • Extended operating temperature range:.
  • 25 to +85°C.
  • Wide supply voltage range operation: 2.7 to 3.6V.
  • Fast access time: (Access time) 3.0V operation -10LLX 100ns (Max. ) -12LLX 120ns (Max. ) 3.3V operation -10LLX 85ns (Max. ) -12LLX 100ns (Max. ).
  • Low standby current: 28µA (Max. ).
  • Low data retention current: 24µA (Max. ).
  • Low power data retention: 2.0V (Min. ).
  • Package 8mm × 13.4mm 32 pin TSOP package Function 131072-word × 8-bit.

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Datasheet preview – CXK5T81000AYN

Datasheet Details

Part number CXK5T81000AYN
Manufacturer Sony Corporation
File Size 235.29 KB
Description 131072-word X 8-bit High Speed CMOS Static RAM
Datasheet download datasheet CXK5T81000AYN Datasheet
Additional preview pages of the CXK5T81000AYN datasheet.

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Full PDF Text Transcription

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CXK5T81000ATN/AYN -10LLX/12LLX 131072-word × 8-bit High Speed CMOS Static RAM Description The CXK5T81000ATN/AYN is a high speed CMOS static RAM organized as 131072-words by 8-bits. Special feature are low power consumption and high speed. The CXK5T81000ATN/AYN is a suitable RAM for portable equipment with battery back up. Features • Extended operating temperature range: –25 to +85°C • Wide supply voltage range operation: 2.7 to 3.6V • Fast access time: (Access time) 3.0V operation -10LLX 100ns (Max.) -12LLX 120ns (Max.) 3.3V operation -10LLX 85ns (Max.) -12LLX 100ns (Max.) • Low standby current: 28µA (Max.) • Low data retention current: 24µA (Max.) • Low power data retention: 2.0V (Min.) • Package 8mm × 13.
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