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CXK5T8512TM - 65536-word X 8-bit High Speed CMOS Static RAM

Datasheet Summary

Description

The CXK5T8512TM/TN is a high speed CMOS static RAM organized as 65536-words by 8-bits.

Special feature are low power consumption and high speed.

The CXK5T8512TM/TN is a suitable RAM for portable equipment with battery back up.

Features

  • Extended operating temperature range:.
  • 25 to +85°C.
  • Wide supply voltage range operation: 2.7 to 3.6V.
  • Fast access time: (Access time) 3.0V operation CXK5T8512TM/TN-10LLX 100ns (Max. ) CXK5T8512TM/TN-12LLX 120ns (Max. ) 3.3V operation CXK5T8512TM/TN-10LLX 85ns (Max. ) CXK5T8512TM/TN-12LLX 100ns (Max. ).
  • Low standby current: 14µA (Max. ).
  • Low data retention current: 12µA (Max. ).
  • Low power data retention: 2.0V (Min. ).
  • Package line-u.

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Datasheet Details

Part number CXK5T8512TM
Manufacturer Sony Corporation
File Size 216.46 KB
Description 65536-word X 8-bit High Speed CMOS Static RAM
Datasheet download datasheet CXK5T8512TM Datasheet
Additional preview pages of the CXK5T8512TM datasheet.

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CXK5T8512TM/TN -10LLX/12LLX 65536-word × 8-bit High Speed CMOS Static RAM Description The CXK5T8512TM/TN is a high speed CMOS static RAM organized as 65536-words by 8-bits. Special feature are low power consumption and high speed. The CXK5T8512TM/TN is a suitable RAM for portable equipment with battery back up. Features • Extended operating temperature range: –25 to +85°C • Wide supply voltage range operation: 2.7 to 3.6V • Fast access time: (Access time) 3.0V operation CXK5T8512TM/TN-10LLX 100ns (Max.) CXK5T8512TM/TN-12LLX 120ns (Max.) 3.3V operation CXK5T8512TM/TN-10LLX 85ns (Max.) CXK5T8512TM/TN-12LLX 100ns (Max.) • Low standby current: 14µA (Max.) • Low data retention current: 12µA (Max.) • Low power data retention: 2.0V (Min.
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