CXK5V81000ATM Description
The CXK5V81000ATM is a high speed CMOS static RAM organized as 131072-words by 8-bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Operating on a single 3.3V supply, and special.
CXK5V81000ATM Key Features
- Extended operating temperature range: -25 to +85°C
- Fast access time: (Access time) -85LLX 85ns (Max.) -10LLX 100ns (Max.)
- Low standby current: 28µA (Max.)
- Low data retention current: 24µA (Max.)
- Single 3.3V supply: 3.3V ± 0.3V
- Low voltage data retention: 2.0V (Min.)
- Package 8mm × 20mm 32 pin TSOP package Function 131072-word x 8-bit static RAM Structure Silicon gate CMOS IC 32 pin TSO