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CXK5V81000ATM - 131072-word X 8-bit High Speed CMOS Static RAM

Datasheet Summary

Description

The CXK5V81000ATM is a high speed CMOS static RAM organized as 131072-words by 8-bits.

A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.

Operating on a single 3.3V supply, and special feature are low power consumption, high speed.

Features

  • Extended operating temperature range:.
  • 25 to +85°C.
  • Fast access time: (Access time) -85LLX 85ns (Max. ) -10LLX 100ns (Max. ).
  • Low standby current: 28µA (Max. ).
  • Low data retention current: 24µA (Max. ).
  • Single 3.3V supply: 3.3V ± 0.3V.
  • Low voltage data retention: 2.0V (Min. ).
  • Package 8mm × 20mm 32 pin TSOP package Function 131072-word x 8-bit static RAM Structure Silicon gate CMOS IC 32 pin TSOP (Plastic) Block Diagram A10 A11.

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Datasheet Details

Part number CXK5V81000ATM
Manufacturer Sony Corporation
File Size 137.65 KB
Description 131072-word X 8-bit High Speed CMOS Static RAM
Datasheet download datasheet CXK5V81000ATM Datasheet
Additional preview pages of the CXK5V81000ATM datasheet.

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Full PDF Text Transcription

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CXK5V81000ATM -85LLX/10LLX 131072-word × 8-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description The CXK5V81000ATM is a high speed CMOS static RAM organized as 131072-words by 8-bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Operating on a single 3.3V supply, and special feature are low power consumption, high speed. The CXK5V81000ATM is a suitable RAM for portable equipment with battery back up. Features • Extended operating temperature range: –25 to +85°C • Fast access time: (Access time) -85LLX 85ns (Max.) -10LLX 100ns (Max.) • Low standby current: 28µA (Max.) • Low data retention current: 24µA (Max.) • Single 3.3V supply: 3.3V ± 0.
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