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CXK5V8257BYM - 32768-word X 8-bit High Speed CMOS Static RAM

Datasheet Summary

Description

The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768words by 8 bits.

A polysilicon TFT cell technology realized extermely low stand-by current and higher data retention stability.

Operating on a single 3.3V supply, directly LVTTL compatible (All inputs and outputs).

Features

  • Single +3.3V supply: 3.3V ±0.3V.
  • Directly LVTTL compatible: All inputs and outputs.
  • Fast access time: (Access time) CXK5V8257BTM/BYM/BM -70LL 70ns (Max. ) -10LL 100ns (Max. ).
  • Low standby current: CXK5V8257BTM/BYM/BM -70LL/10LL 3.5µA (Max. ).
  • Low power data retention: 2.0V (Min. ).
  • Available in many packages CXK5V8257BTM/BYM 8mm × 13.4mm 28 pin TSOP Package CXK5V8257BM 450mil 28 pin SOP Package Function 32768-word × 8 bit static RAM Structure Si.

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Datasheet Details

Part number CXK5V8257BYM
Manufacturer Sony Corporation
File Size 204.47 KB
Description 32768-word X 8-bit High Speed CMOS Static RAM
Datasheet download datasheet CXK5V8257BYM Datasheet
Additional preview pages of the CXK5V8257BYM datasheet.

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Full PDF Text Transcription

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CXK5V8257BTM/BYM/BM -70LL/10LL 32768-word × 8-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768words by 8 bits. A polysilicon TFT cell technology realized extermely low stand-by current and higher data retention stability. Operating on a single 3.3V supply, directly LVTTL compatible (All inputs and outputs). And special feature are, low power consumption, high speed and broad package line-up. The CXK5V8257BTM/BYM/BM is a suitable RAM for portable equipment with battery back up. Features • Single +3.3V supply: 3.3V ±0.3V • Directly LVTTL compatible: All inputs and outputs • Fast access time: (Access time) CXK5V8257BTM/BYM/BM -70LL 70ns (Max.
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