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DM-106B - Magnetoresistance Element

Description

The DM-106B is a highly sensitive magnetoresistance element composed of an evaporated ferromagnetic alloy on a silicon substrate.

Features

  • Low power consumption M-110 (Plastic) 11 mW (Typ. ) VCC=5 V.
  • Low magnetic field and high sensitivity 80 mVp-p (Typ. ) VCC=5 V H=8000 A/m.
  • High reliability Ensured through silicon Nitride protective filming Structure Thin-film nickel-cobalt magnetic alloy on silicon substrate Absolute Maximum Ratings (Ta=25 °C).
  • Supply voltage VCC 10.
  • Operating temperature Topr.
  • 40 to +100.
  • Storage temperature Tstg.
  • 50 to +125 Recommended Oper.

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DM-106B Magnetoresistance Element For the availability of this product, please contact the sales office. Description The DM-106B is a highly sensitive magnetoresistance element composed of an evaporated ferromagnetic alloy on a silicon substrate. (The element can be used for automatic shut off of tape recorders, as a contactless switch, and as a general detector of rotational motion.) Features • Low power consumption M-110 (Plastic) 11 mW (Typ.) VCC=5 V • Low magnetic field and high sensitivity 80 mVp-p (Typ.
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