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DM-111A - Magneto-Resistance Element

Description

The DM-111A is a highly sensitive magnetic resistance element, composed of an evaporated ferromagnetic alloy on a silicon substrate.

The element can be used for detection of rotational speed and for detection of angle of rotation and as a detection of position.

Features

  • Low power consumption 38µW (Typ. ) at VCC=5V.
  • Low magnetic field and high sensitivity 75mVp-p (Typ. ) at VCC=5V and H=4000A/m.
  • High reliability Ensured through silicon nitride protective filming Absolute Maximum Ratings (Ta=25°C).
  • Supply voltage VCC 10.
  • Operating temperature Topr.
  • 40 to +80.
  • Storage temperature Tstg.
  • 50 to +100 Recommended Operating Condition 5 M-102 (Plastic) V °C °C V Electrical Characteristics Item Total r.

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DM-111A Magneto-Resistance Element For the availability of this product, please contact the sales office. Description The DM-111A is a highly sensitive magnetic resistance element, composed of an evaporated ferromagnetic alloy on a silicon substrate. The element can be used for detection of rotational speed and for detection of angle of rotation and as a detection of position. Features • Low power consumption 38µW (Typ.) at VCC=5V • Low magnetic field and high sensitivity 75mVp-p (Typ.
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