SLD324ZT Datasheet | Sony Semiconductor Solutions

Description The SLD324ZT is a gain-guided, high-power density laser diode with a built-in TE cooler. A new flat, square package with a low thermal resistance and an in-line pin configuration is employed. Fine tuning of the wavelength is possible by controlling the laser chip temperature. Features - High power Remended optical power output: Po = 2.0W - Low operating current: Iop = 2.5A (Po = 2.0W) - Newly developed flat package with built-in photodiode, TE cooler and thermistor Applications - Solid state laser excitation - Medical use - Material processes - Measurement Structure Ga Al As quantum well structure laser diode Absolute Maximum Ratings (Tth = 25°C) - Optical power output Po - Reverse voltage VR LD PD - Operating temperature (Tth) Topr - Storage temperature Tstg - Operating current of TE cooler IT Pin Configuration (Top View) No. 1 2 3 4 5 6 Function TE Cooler (negative) TE Cooler (negative) Thermistor Thermistor LD (anode) LD (anode) No. 7 8 9 10 11 12 Function LD (cathode) LD (cathode) PD (cathode) PD (anode) TE Cooler (positive) TE Cooler (positive) Equivalent Circuit TE Cooler 2.2 2 15 - 10 to +30 - 40 to +85 4.0 W V V °C °C A 1 2 5 6 7 8 10 11 12 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. - 1- E93322B81-PS Electrical and Optical Characteristics Item Threshold current Operating current Operating voltage Wavelength∗1 Monitor current Radiation angle (F. W. H. M.∗) Positional accuracy Differential efficiency Thermistor resistance Perpendicular Parallel Position Angle Symbol Ith Iop Vop λp Imon θ⊥ θ// ∆X, ∆Y ∆φ⊥ ηD Rth PO = 2.0W PO = 2.0W PO = 2.0W PO = 2.0W VR = 10V PO =...