Datasheet4U Logo Datasheet4U.com

SLD343YT - 4W High Power Laser Diode

Description

The SLD343YT has a compatible package, and allows independent thermal and electric design.

It is a high power laser diode that affords easy optical design.

Features

  • High-optical power output Recommended optical power output: PO = 4.0W.
  • High-optical power density: 4W/200µm (Emitting line width).

📥 Download Datasheet

Datasheet preview – SLD343YT

Datasheet Details

Part number SLD343YT
Manufacturer Sony Corporation
File Size 75.58 KB
Description 4W High Power Laser Diode
Datasheet download datasheet SLD343YT Datasheet
Additional preview pages of the SLD343YT datasheet.

📁 Similar Datasheet

  • SLD30-018 - TVS Diodes (Littelfuse)
  • SLD3091FZ - 30 Watt Discrete LDMOS FET (Sirenza Microdevices)
  • SLD30A - 6000Watt Transient Voltage Suppressors (MCC)
  • SLD30CA - 6000Watt Transient Voltage Suppressors (MCC)
  • SLD30L03A - N- and P-Channel MOSFET (Msemitek)
  • SLD30U-017 - TVS Diodes (Littelfuse)
  • SLD33-018 - TVS Diodes (Littelfuse)
  • SLD33A - 6000Watt Transient Voltage Suppressors (MCC)
  • SLD33CA - 6000Watt Transient Voltage Suppressors (MCC)
  • SLD33U-017 - TVS Diodes (Littelfuse)
Other Datasheets by Sony Corporation
  • SLD342YT - 2W High Power Laser Diode
  • SLD344YT - 6W High Power Laser Diode
  • SLD344YT-3 - 6W High Power Laser Diode
  • SLD301B - Block-type 100mW High Power Laser Diode
  • SLD301V - 100mW High Power Laser Diode
  • SLD301WT - 100mW HIGH POWER LASER DIODE
  • SLD301XT - 100mW High Power Laser Diode
  • SLD302B - Block-type 200mW High Power Laser Diode

Full PDF Text Transcription

Click to expand full text
SLD343YT 4W High Power Laser Diode Description The SLD343YT has a compatible package, and allows independent thermal and electric design. It is a high power laser diode that affords easy optical design. Features • High-optical power output Recommended optical power output: PO = 4.0W • High-optical power density: 4W/200µm (Emitting line width) Applications • Solid state laser excitation • Medical use • Material processing • Measurement Structure AlGaAs quantum well structure laser diode Operating Lifetime MTTF 10,000H (effective value) at Po = 4.0W, Tth = 25°C Absolute Maximum Ratings (Tth = 25°C) • Optical power output PO 4.
Published: |