Sony 3SK165A
The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. This information does not convey any license by any implication or otherwise under any patents or other right.| Part No. | 3SK165A |
|---|---|
| Datasheet | 3SK165A Download |
| Manufacturer |  Sony |
| Description | GaAs N-channel Dual Gate MES FET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● Low voltage operation● Low noise: NF = 1.2dB (typ.) at 800MHz
● High gain: Ga = 20dB (typ) at 800MHz
● High stability Application UHF band amplifier, mixer and oscillator Structure GaAs N-channel dual-gate metal semiconductor field-effect transistor
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C)● Drain to source voltage VDSX 8
● Gate 1 to source voltage VG1S –6
● Gate 2 to source voltage VG2S –6
● Drain current ID 80
● Allowable power dissipation PD 150
● Channel temperature Tch 150
● Storage temperature Tstg –55 to +150 V V V mA mW °C °C Sony reserves the right to change products and specifications without prior notice. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E96Y12-PS 3SK165A
ELECTRICAL CHARACTERISTICS
Item Drain cut-off current Symbol IDSX Condition Min. Typ. VDS = 8V VG1S = –4V VG2S = 0V VG1S = –4V IG1SS VG2S = 0...
