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CXG1010N Datasheet PDF

Sony CXG1010N

The CXG1010N is a power amplifier for PHS. This IC is designed using the Sony’s GaAs J-FET process and operates at a single power supply.
Part No. CXG1010N
Datasheet CXG1010N Download
Manufacturer
Sony
Description Power Amplifier for PHS
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CXG1010N datasheet page 1 preview

DESCRIPTION

The CXG1010N is a power amplifier for PHS.

FEATURES

● High output power 21.5 dBm
● Positive power supply drive VDD=3.4 V
● Low current consumption 200 mA
● High gain 40 dB Typ.
● Low distortion (ACP) –59 dBc Typ.
● Small mold package 16-pin SSOP Structure GaAs J-FET MMIC 16 pin SSOP (Plastic)

ABSOLUTE MAXIMUM RATINGS

(Ta=25 °C) 6
● Supply voltage VDD
● Voltage between gate and source Vgs0 1.5
● Drain current IDD 500
● Power dissipation PD 3
● Channel temperature
● Operating temperature
● Storage temperature Tch Top Tstg 175 –35 to +85 –65 to +150 V V mA W °C °C °C

ELECTRICAL CHARACTERISTICS

VDD=3.4 V, VCTL=2.0 V, f=1.90 GHz Item ∗1 Current consumption ∗1 Gate voltage adjustment value Input VSWR Output power (for –15.5 dBm input) ∗2 Power gain ∗2 Gain control ∗3 ∗2 Average leak power level (600 kHz±100 kHz) ∗2 Average leak power level (900 kHz±100 kHz) Symbol IDD VGG2 VSWRIN POUT GP GCTL PLEAK600 PLEAK900 Min. 0 21.5 37 Typ. 200 0.5 1.5 40 20 –59 –65 –54 –59 Max. 1.0 2.0 43...
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