Sony CXG1030N
The CXG1030N is a power amplifier for PHS. This IC is designed using the Sony’s GaAs J-FET process and operates at a single power supply.| Part No. | CXG1030N |
|---|---|
| Datasheet | CXG1030N Download |
| Manufacturer |  Sony |
| Description | Power Amplifier |
| Buy | Stock & Price |
DESCRIPTION
The CXG1030N is a power amplifier for PHS.FEATURES
● Output power 21 dBm● Positive power supply 3.0 V
● Low current consumption 170 mA
● High power gain 39 dB Typ.
● Small mold package 16-pin SSOP Structure GaAs J-FET MMIC 16 pin SSOP (Plastic)
ABSOLUTE MAXIMUM RATINGS
(Ta=25 °C)● Supply voltage VDD 6 V
● Voltage between gate and source Vgs0 1.5 V
● Drain current IDD 500 mA
● Power dissipation PD 3 W
● Channel temperature Tch 175 °C
● Operating temperature Top –35 to +85 °C
● Storage temperature Tstg –65 to +150 °C
ELECTRICAL CHARACTERISTICS
VDD=3.0 V, VCTL=2.0 V, f=1.90 GHz Item ∗1 Current consumption ∗1 Gate voltage adjustment value Output power ∗2 Power gain ∗2 Adjacent channel leak power ratio (600 kHz ±100 kHz) Symbol IDD VGG2 POUT GP ACPR600 Min. 0 21 36 Typ. 170 0.4 39 –59 –54 Max. 0.8 (Ta=25 °C) Unit mA V dBm dB dBc ∗1 Values where VGG1 and VGG2 are adjusted so that IDD becomes 170 mA when 21.0 dBm is output. ∗2 When 21.0 dBm is output. Sony reserves the right to change products and specifications without prior notice.
