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CXK5B16120TM - High Speed Bi-CMOS Static RAM

This page provides the datasheet information for the CXK5B16120TM, a member of the CXK5B16120J High Speed Bi-CMOS Static RAM family.

Datasheet Summary

Description

CMOS static RAM organized as 65536 words by 16 bits.

Operating on a single 3.3V supply this asynchronous IC is suitable for use in high speed and low power applications.

Features

  • Single 3.3V Supply 3.3V±0.3V.
  • Fast access time 12ns (Max. ).
  • Low stand-by current: 10mA (Max. ).
  • Low power operation 972mW (Max. ).
  • Package line-up Dual Vcc/Vss CXK5B16120J 400mil 44pin SOJ Package CXK5B16120TM 400mil 44pin TSOP Package Function 65536-word × 16-bit static RAM Structure Silicon gate Bi-CMOS IC Block Diagram A14 A15 A9 A8 A12 A13 A11 A10 A5 A4 A3 A0 A2 A1 A6 A7 UB LB WE OE Buffer Buffer Row Decoder Pin configuration Pin Desc.

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Datasheet preview – CXK5B16120TM

Datasheet Details

Part number CXK5B16120TM
Manufacturer Sony
File Size 236.13 KB
Description High Speed Bi-CMOS Static RAM
Datasheet download datasheet CXK5B16120TM Datasheet
Additional preview pages of the CXK5B16120TM datasheet.

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Full PDF Text Transcription

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CXK5B16120J/TM -12 65536-word × 16-bit High Speed Bi-CMOS Static RAM For the availability of this product, please contact the sales office. Description CXK5B16120J/TM is a high speed 1M bit Bi- CMOS static RAM organized as 65536 words by 16 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in high speed and low power applications. CXK5B16120J 44 pin SOJ (Plastic) CXK5B16120TM 44 pin TSOP (Plastic) Features • Single 3.3V Supply 3.3V±0.3V • Fast access time 12ns (Max.) • Low stand-by current: 10mA (Max.) • Low power operation 972mW (Max.
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