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SSD1030P - P-Channel Enhancement Mode MOSFET

Key Features

  • Super high density cell design for low RDS(ON). Rugged and reliable. TO-252 package. Pb free. G S.

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Datasheet Details

Part number SSD1030P
Manufacturer South Sea Semiconductor
File Size 176.87 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSD1030P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 65 @VGS = - 10V -30V -15A 115 @VGS = - 5V 130 @VGS = - 4.5V G S D SSD1030P TO-252 D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. TO-252 package. Pb free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit -30 + - 25 -15 -30 -1.