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SSS3402
N-Channel Enhancement Mode MOSFET
Product Summary
VDS (V)
30V
SOT-23
D
ID (A)
4.6A
RDS(ON) (mΩ) Max 30 @VGS = 10V
G
50 @VGS = 4.5V
S
D
FEATURES
Super high density cell design for low RDS(ON). Rugged and reliable. SOT-23 package. Pb free.
o
G S
ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ Ta -Pulsed
b
Symbol
VDS VGS 25 C 70 C
o o
Limited
30 + - 20 4.6 3.75 16 1.25 1.25 0.