FEATURES
! ! ! ! GaAs FET Amplifier High Output Power: +22 dBm Typical Operating Temp. - 30 ºC to + 71 ºC Environmental Screening Available Available as: TM3019, 4 Pin TO-8 (T4) TN3019, 4 Pin Surface Mount (SM3) BX3019, Connectorized Housing (H1) Typical Intermodulation Performance at 25 º C Second Order Harmonic Intercept Point ....... +55 dBm (Typ.) Second Order Two Tone Intercept Point ........ +50 dBm (Typ.) Third Order Two Tone Intercept Point ............ +36 dBm (Typ.) Specifications CHARACTERISTIC Frequency Gain (dB) Power @ 1 dB Comp. (dBm) Reverse Isolation (dB) VSWR In Out Noise Figure (dB) Power Vdc mA TYPICAL Ta= 25 ºC 500 - 1300 MHz 13.5 +22 -21.5 <1.75:1 <1.5:1 2.2 +15 105 MIN/MAX Ta = -30 ºC to +71 ºC 500 - 1300 MHz 12.5 Min. +21 Min. -20 Max. 2.2:1 Max. 2.0:1 Max. 3.0 Max. +15 110 Max. MAXIMUM RATINGS
Ambient Operating Temperature .............. -55ºC to + 100 ºC Storage Temperature ............................... -62ºC to + 125 ºC Case Temperature ................................................. + 125 ºC DC Voltage ......................................................... + 18 Volts Continuous RF Input Power .....
Spectrum Microwave