• Part: SLN-186
  • Manufacturer: Stanford Microdevices
  • Size: 219.95 KB
Download SLN-186 Datasheet PDF
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SLN-186 Key Features

  • Patented, Reliable GaAs HBT Technology
  • Low Noise Figure: 2.0dB from 0.1 to 1.5 GHz
  • High Associated Gain: 22dB Typ. at 2.0 GHz
  • True 50 Ohm MMIC : No External Matching
  • Low Current Draw : Only 8mA
  • Low Cost Surface Mount Plastic Package

Related Stanford Microdevices Datasheets

Part Number Description
SLN-286 3Volt 50 Ohm LNA MMIC Amplifier

SLN-186 Description

Stanford Microdevices’ SLN-186 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface mount plastic package. A Darlington configuration is used for broadband performance from DC-4.0 GHz. The SLN-186 needs only 2 DC-blocking capacitors and a bias resistor for operation.