• Part: SLN-286
  • Manufacturer: Stanford Microdevices
  • Size: 223.66 KB
Download SLN-286 Datasheet PDF
SLN-286 page 2
Page 2
SLN-286 page 3
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SLN-286 Key Features

  • Patented, Reliable GaAs HBT Technology
  • Low Noise Figure: 1.7 dB from 0.1 to 1.5 GHz
  • High Associated Gain: 27 dB Typ. at 2.0 GHz
  • True 50 Ohm MMIC : No External Matching
  • Low Current Draw : Only 5 mA at 3V
  • Low Cost Surface Mount Plastic Package

SLN-286 Description

Stanford Microdevices’ SLN-286 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface mount plastic package. A Darlington configuration is used for broadband performance from DC-3.5 GHz. The SLN-286 needs only 2 DC-Blocking capacitors and a bias resistor for operation.