SPA-1218 Datasheet | Stanford Microdevices

Description Stanford Microdevices’ SPA-1218 is a high efficiency Ga As Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 1950 MHz PCS band. Its high linearity makes it an ideal choice for multi-carrier and digital applications. 1960 MHz 1 Watt Power Amp with Active Bias VCC VBIAS RFIN .. Active Bias Product Features - On-chip Active Bias Control - Patented High Reliability Ga As HBT Technology - High Linearity Performance: +48d Bm OIP3 Typ. - Surface-Mountable Plastic Package Applications - PCS Systems - Multi-Carrier Applications RFOUT/ VCC Input Match N/C Symbol f0 P 1d B S 21 S11 OIP3 Icc Rth, j-l Parameters: Test C onditions: Z0 = 50 Ohms, VC C =5V, Temp = 27ºC Frequency of Operati on Output Power at 1d B C ompressi on Vc1, Vbi as, Vc2 = 5.0V Small Si gnal Gai n Input VSWR Output Thi rd Order Intercept Poi nt Power out per tone = +14 d Bm D evi ce C urrent, VC C = 5V Thermal Resi stance (juncti on - lead) U nits MHz d B m d B d B m m A ºC /W Min. 1930 Typ. Max. 1990 29.5 12.0 1.5:1 48.0 320 40 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford...