Stanford Microdevices SSW108
SSW-108 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable small outline plastic package. This single-pole, double-throw, non-reflective switch consumes less than 50uA and operates at -5V and 0V for control bias. Its high isolation and low insertion loss makes it ideal for T/R switching in analog and digital wireless communication systems.| Part No. | SSW108 |
|---|---|
| Datasheet | SSW108 Download |
| Manufacturer | Stanford Microdevices |
| Description | DC-4 GHz High Isolation GaAs MMIC SPDT Switch |
| Buy | Stock & Price |
DESCRIPTION
Stanford Microdevices’ The die is fabricated using 0.5 micron FET process with gold metallization and silicon nitride passivation to achieve excellent performance and reliability. SSW-108 DC-4 GHz High Isolation GaAs MMIC SPDT Switch Isolation vs. Frequency VControl = -5 V -20 -30 -40 dB -50 -60 -70 D C 1 2 3 4 ProductFEATURES
● High Isolation: 32dB at 2GHz● Low DC Power Consumption
● Non-reflective
● Broadband Performance - True DC Operation
● Low Cost Small Outline Plastic Package
APPLICATIONS
● Analog/Digital Wireless System● Spread Spectrum
● GPS Switches GHz
ELECTRICAL SPECIFICATIONS
at Ta = 25C Sym bol In s P a r a m e te r s : T e s t C o n d itio n s In s e r tio n L o s s U n its M in . Ty p . 0 .8 0 .9 1 .4 30 22 40 35 25 1 .1 5 1 .2 5 1 .5 0 1 .1 5 1 .2 5 1 .5 0 dBm dBm dBm dBm uA nsec +26 +29 +45 +48 40 3 M ax. 1 .3 1 .4 f = 0 .0 5 -1 .0 G H z f = 1 .0 -2 .0 G H z f = 2 .0 -4 .0 G H z f = 0 .0 5 -1 .0 G H z f = 1 .0 -2 .0 G H z f = 2 .0 -4 .0 G H z f = 0 .0 5...