SSW308 Datasheet | Stanford Microdevices

Description Stanford Microdevices’ SSW-308 is a high perfomance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable small outline plastic package. This single-pole, double-throw, reflective switch consumes less than 40u A and operates with 0V/-5V control voltages. This switch can be used in both analog and digital wireless munication systems including AMPS, PCS, DECT, and GSM. Typical output power at 1d B pression is +28d Bm. 1d B output power over 1 watt may be achieved with higher control voltages. The die is fabricated using 0.5 micron FET process with gold metallization and silicon nitride passivation to achieve excellent performance and reliability. Isolation vs. Frequency VControl = -5 V -10 -20 SSW-308 DC-3 GHz Low Cost Ga As MMIC SPDT Switch Product Features - Fast Switching Speed : 3nsec - HIgh LInearity : +47d Bm IP3 - Ultra Low DC Power Consumption - Low Insertion Loss : 0.7d B at 1GHz - Low Cost Small Outline Plastic Package Applications - Digital Cellular - Spread Spectrum d B -30 -40 -50 D C 1 2 3 GHz Switches Electrical Specifications at Ta = 25C Sym bol P a r a m e te r s : T e s t C o n d itio n s : Z 0= 5 0 o h m s U n its M in . Ty p . M ax. In s In s e r tio n L o s s f = 0 .0 5 - 1 .0 G H z f = 1 .0 0 - 2 .0 G H z f = 1 .0 0 - 3 .0 G H z f = 0 .0 5 - 1 .0 G H z f = 1 .0 0 - 2 .0 G H z f = 1 .0 0 - 3 .0 G H z f = 0 .0 5 - 1 .0 G H z f = 1 .0 0 - 2 .0 G H z f = 1 .0 0 - 3 .0 G H z V = -8 V V = -5 V V = -8 V V = -5 V d B d B d B d B d B d B 20 17 d Bm d Bm d Bm d Bm u A nsec 0 .6 0 .9 1 .2 25 22 16 1 .2 :1 1 .4 :1 1 .7 :1 +31 +28 +50 +47 35 3 0 .9 1 .3 Is o l Is o la tio n VSW R on In p u t & O u tp u t V S W R ( lo w lo s s s ta te ) 1 d B C o m p r e s s io n a t 0 .5 - 2 .0 G H z T h ir d O r d e r In te r c e p t D e v ic e C u r r e n t S w itc h in g S p e e d 5 0 % c o n tr o l to 1 0 % /9 0 % R F P 1d B IP 3 ID Is w The information provided herein is believed to be reliable at press time. Stanford...