SSW408 Datasheet PDF (DC-4 GHz High Power GaAs MMIC SPDT Switch)

SSW408 - DC-4 GHz High Power GaAs MMIC SPDT Switch

This page provides the datasheet information for the SSW408, a member of the SSW-408 DC-4 GHz High Power GaAs MMIC SPDT Switch family.

Description

Stanford Microdevices’ SSW-408 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface mountable small outline plastic package.

Features

High Compression Point : up to 4 Watts.
HIgh Linearity : TOIP +55dBm @2GHz.
Low DC Power Consumption.
Low Insertion Loss : 1.2dB at 2GHz.
Operates from Positive or Negative 3V to 8V Supplies.
Low Cost Small Outline Plastic Package -20 dB -30 -40 DC 1 2 3 4 GHz.

Datasheet Details

Part number	SSW408
Manufacturer	Stanford Microdevices
File Size	104.77 KB
Description	DC-4 GHz High Power GaAs MMIC SPDT Switch
Datasheet	SSW408 Datasheet
Additional preview pages of the SSW408 datasheet.

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Full PDF Text Transcription

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Preliminary Preliminary Preliminary Product Description Stanford Microdevices’ SSW-408 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface mountable small outline plastic package. This single-pole, double-throw reflective switch consumes less than 50uA and can operate with positive or negative 3V to 8V supply voltages, making it suitable for use in both infrastructure and subscriber equipment. This switch can be used in all analog and digital wireless communication systems including (but not limited to) AMPS, PCS, DECT, IS-95, IS-136, 802.11, CDPD and GSM. At +5V or –5V bias, typical output power at 1dB compression is 3 watts. 1dB output power over 4 watts and IP3 over +55dBm may be achieved with higher control voltages.

Published: Jan 3, 2006 |