MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
¡] Ta=25¢J¡^ PARAMETERS SYMBOL MIN TYP MAX UNIT CONDITION Collector-Emitter Breakdown Voltage BVceo -50 V Ic=1mA Collector-Base Breakdown Voltage BVcbo -60 V Ic=5uA Emitter-Base Breakdown Voltage BVebo -5 V Ie=50£g A Collector-Base Leakage Icbo -0.1 uA Vcb=-60V Emitter-Base Leakage Iebo -0.1 uA Veb=-5V Collector-Emitter Saturation Voltage Vce¡] sat¡ ^ -0.18 -0.3 V Ic=-100mA, Ib=-10mA DC Current Gain Hfe 90 200 600 Vce=-6.0V,Ic=-1.0mA Collector Current Ic -100 mA Current Gain Bandwidth fT 100 180 MHz Vce=-6V, Ie=10mA Output Capacitance Cob 4.5 6.0 pF Vcb=-10V,Ie=0,f=1MHz Power Dissipation Pc 0.25 W Junction Temperature Tj 125 ¢J Storage Temperature Tstg -55 125 ¢J Classification of Hfe Rank Range R 90-180 Q 135-270 P 200-400 K 300-600 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
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