M02N60B Datasheet | Stanson Technology

FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time parable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS(on) Specified at Elevated Temperature 1 2 3 1.Gate 2.Drain 3.Source ABSOLUTE MAXIMUM RATINGS RATING Drain to Current - Continuous - Pulsed Gate-to-Source Voltage - Continue - Non-repetitive Total Power Dissipation TO-251/252 TO-220 Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Tj = 25¢J (VDD =100V, VGS = 10V, IAS = 2A, L = 10m H, RG = 25£[) Thermal Resistance - Junction to Case - Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8’’ form 10 seconds SYMBOL VALUE ID IDM VGS VGSM PD 60 60 -55 to 150 20 1.0 62.5 260 2.0 9.0 +/-20 +/-40 UNIT A V V W TJ, TSTG EAS £ c £c ¢J m J ¢J /W ¢J STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 1 N Channel MOSFET .. 2.0A MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS¡] PARAMETERS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Gate Threshhold Voltage Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Rise Time Fall Time Total Gate Charge Gate-Drain Charge Gate-Drain Charge Intemal Drain Inductance Internal Drain Inductance SYMBO MIN L V(BR)DSS 600 IDSS IGSSF VGS(th) RDS(on) Ciss Coss Crss td(on) Td(off) tr tf Qg Qgd Qgs LD Ls 435 56 9.2 12 30 21 24 13 6.0 2.0 4.5 7.5 22 2.0 TYP MAX UNIT Vdc 0.1 1.0 100 4.0 4.4 m A m A n A V Ohm p F p F p F n S n S n S n S n C n C n C n H n H Ta=25¢J¡^ CONDITION VGS=0, ID=250u A VDS=600V, VGS=0 VDS=480V, VGS=0, Tj=125¢J VGSF=20V, VDS=0 VDS=VGS, ID=250u A VGS=10V, ID=1.2A- VDS=25V, VGS=0, f=1 MHz VDD=300V, ID=2.0A, VGS=10V, RG=18£[ VDS=400V, ID=2.0A VGS=10V- Measured from the drain lead 0.25’’ From package to center of die Measured...