DESCRIPTION
PIN CONFIGURATION SOT-23 3 D G S 1 2 FEATURE 20V/3.6A, RDS(ON) = 70mΩ @VGS = 4.5V 20V/3.1A, RDS(ON) = 95 mΩ @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 1.Gate 2.Source 3.Drain PART MARKING SOT-23 3 S02YA 1 2 Y: Year Code A: Process Code ORDERING INFORMATION Part Number Package ST2302 SOT-23 ※ Process Code : A ~ Z ; a ~ z Part Marking S02YA STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA ST2302 2005. V1 ST2302 N Channel Enhancement Mode MOSFET 3.6A ABSOULTE MAXIMUM RATINGS
(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS 20 Gate-Source Voltage VGSS ±12 Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ ID 3.6 2.6 Pulsed Drain Current IDM 10 Continuous Source Current (Diode Conduction) IS Power Dissipation TA=25℃ TA=70℃ PD Operation Junction Temperature TJ 1.6 1.25 0.8 150 Storgae Temperature Range TSTG -55/150 Thermal Resistance-Junction to Ambient RθJA 100 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA ST2302 2005.
Stanson Technology
