ST2302 Datasheet | Stanson Technology

DESCRIPTION ST2302 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23 FEATURE 20V/3.6A, RDS(ON) = 70mΩ @VGS = 4.5V 20V/3.1A, RDS(ON) = 95 mΩ @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 1.Gate 2.Source 3.Drain PART MARKING SOT-23 S02YA Y: Year Code A: Process Code ORDERING INFORMATION Part Number Package SOT-23 ※ Process Code : A ~ Z ; a ~ z Part Marking S02YA STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA .stansontech. ST2302 2005. V1 N Channel Enhancement Mode MOSFET 3.6A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS Gate-Source Voltage VGSS ±12 Continuous Drain Current TJ=150℃) TA=25℃ TA=70℃ 3.6 2.6 Pulsed Drain...