ST6006 - N Channel Enchancement Mode MOSFET

Description

The ST6006 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.

This ST6006 is densigned to withstand high energy in the avalanche and commutation modes.

Stanson Technology

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Datasheet Details

Part number	ST6006
Manufacturer	Stanson Technology
File Size	227.36 KB
Description	N Channel Enchancement Mode MOSFET
Datasheet	ST6006 Datasheet
Additional preview pages of the ST6006 datasheet.

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www.DataSheet4U.com N Channel Enchancement Mode MOSFET 60V/60A DESCRIPTION ST6006S / ST6006 The ST6006 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This ST6006 is densigned to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safetv margin against unexpected voltage transients.

Published: Apr 5, 2007 |