ST9435GP Datasheet PDF | Stanson Technology

Stanson Technology ST9435GP

ST9435GP is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These device is particularly suited for low voltage application, notebook computer power management and other battery circuits where high-side switching.

Part No.	ST9435GP
Datasheet	ST9435GP Download
Manufacturer	Stanson Technology
Description	MOSFET
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DESCRIPTION

PIN CONFIGURATION FEATURE -30V/-10A, RDS(ON) = 50mΩ @VGS = -10V -30V/-5A, RDS(ON) = 80mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-220 package design ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Symb ol VDSS TA=25℃ TA=100℃ VGSS ID IDM Typical -30 ±20 -15.0 -8.0 -60 Power Dissipation TA=25℃ PD 62.5 Operation Junction Temperature Storgae Temperature Range TJ TSTG -55/150 -55/150 Thermal Resistance-Junction to Ambient RθJA 62 Unit V V A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2009, Stanson Corp. ST9435GP 2010. V1 ST9435GP P Channel Enhancement Mode MOSFET -15.0A

ELECTRICAL CHARACTERISTICS

( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshol...