ST9435GP Datasheet | Stanson Technology

P Channel Enhancement Mode MOSFET -15.0A DESCRIPTION ST9435GP is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These device is particularly suited for low voltage application, notebook puter power management and other battery circuits where high-side switching. PIN CONFIGURATION FEATURE -30V/-10A, RDS(ON) = 50mΩ @VGS = -10V -30V/-5A, RDS(ON) = 80mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-220 package design ABSOULTE...