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STC4539S8RG - N&P Pair Enhancement Mode MOSFET

This page provides the datasheet information for the STC4539S8RG, a member of the STC4539 N&P Pair Enhancement Mode MOSFET family.

Datasheet Summary

Description

The STC4539 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

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Datasheet preview – STC4539S8RG

Datasheet Details

Part number STC4539S8RG
Manufacturer Stanson Technology
File Size 444.79 KB
Description N&P Pair Enhancement Mode MOSFET
Datasheet download datasheet STC4539S8RG Datasheet
Additional preview pages of the STC4539S8RG datasheet.

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Full PDF Text Transcription

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STC4539 N&P Pair Enhancement Mode MOSFET 6.8A / -6.2A DESCRIPTION The STC4539 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as notebook computer power management and other battery powered circuits, where high-side switching, low in-line power loss and resistance to transient are needed. PIN CONFIGURATION SOP-8 PART MARKING SOP-8 FEATURE N-Channel z 30V/6.8A, RDS(ON) = 34mΩ @VGS = 10V z 30V/5.6A, RDS(ON) = 46mΩ @VGS = 4.5V P-Channel z -30V/-6.2A, RDS(ON) = 60mΩ @VGS = -10V z -30V/-4.6A, RDS(ON)= 80mΩ @VGS = - 4.
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