STN3456ST6RG datasheet by Stanson Technology.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | STN3456ST6RG |
|---|---|
| Datasheet | STN3456ST6RG STN3456 Datasheet (PDF) |
| File Size | 398.03 KB |
| Manufacturer | Stanson Technology |
| Description | MOSFET |
|
|
The STN3456 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and notebook puter power management and other battery powered circuits, and low in-line power loss are...
View all Stanson Technology datasheets
| Part Number | Description |
|---|---|
| STN3456 | MOSFET |
| STN3446 | MOSFET |
| STN1012 | MOSFET |
| STN1304 | 2A N-Channel Enhancement Mode MOSFET |
| STN1810 | MOSFET |
| STN18T20 | MOSFET |
| STN2018 | MOSFET |
| STN4102 | MOSFET |
| STN410D | MOSFET |
| STN4110 | 40A N-Channel Enhancement Mode MOSFET |
