Stanson Technology STN3456ST6RG
The STN3456 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.| Part No. | STN3456ST6RG |
|---|---|
| Datasheet | STN3456ST6RG Download |
| Manufacturer |  Stanson Technology |
| Description | MOSFET |
| Buy | Stock & Price |
DESCRIPTION
PIN CONFIGURATION TSOP-6P FEATURE● 30V/6.0A, RDS(ON)=40mΩ@VGS=10V
● 30V/5.0A, RDS(ON)=50mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional an-resistance and maximum DC current capability
● TSOP-6P package design Y: Year Code W: Week Code ORDERING INFORMATION Part Number Package Part Marking STN3456ST6RG TSOP-6 56YW ※ Week Code Code : A ~ Z ; a ~ z ※ STN3456ST6RG ST6 : TSOP-6; R: Tape Reel ; G: Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA STN3456 2008. V1 STN3456 N Channel Enhancement Mode MOSFET 6.0A ABSOULTE
MAXIMUM RATINGS
(Ta = 25℃ unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS 30 Gate-Source Voltage VGSS ±20 Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current ID IDM 6.0 5.0 30 Continuous Source Current (Diode Conduction) IS 1.7 Power Dissipation Operation Junction Temperature TA=25℃ TA=70℃ PD TJ 2.0 1.3 150 Storage Temperature Range TSTG -55/150 Thermal Resistance-Junction to Ambient RθJA 90 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA STN3456 2008.
