DESCRIPTION
Those devices are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE 60V/20.0A, RDS(ON) = 10mΩ (Typ.) @VGS = 10V 60V/20.0A, RDS(ON) = 12mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-252,TO-251 package design PART MARKING Y: Year Code A: Date Code Q:Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA . STN4110 2010. V1 STN4110 N Channel Enhancement Mode MOSFET 40.0A ABSOULTE MAXIMUM RATINGS
(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ VGSS ID IDM Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature IS PD TJ Storgae Temperature Range TSTG Thermal Resistance-Junction...
Stanson Technology
