STN4412S8RG Datasheet PDF | Stanson Technology

Stanson Technology STN4412S8RG

STN4412 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching.

Part No.	STN4412S8RG
Datasheet	STN4412S8RG Download
Manufacturer	Stanson Technology
Description	MOSFET
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DESCRIPTION

PIN CONFIGURATION SOP-8 FEATURE z 30V/6.8A, RDS(ON) = 28mΩ @VGS = 10V z 30V/5.6A, RDS(ON) = 36mΩ @VGS = 4.5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOP-8 package design PART MARKING SOP-8 STN4412 SYA ORDERING INFORMATION Part Number STN4412S8RG Package SOP-8P Part Marking STN4412 STN4412S8TG SOP-8P STN4412 ※ Process Code : A ~ Z ; a ~ z ※ STN4412S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2007, Stanson Corp. STN4412 2007. V1 STN4412 N Channel Enhancement Mode MOSFET 6.8A ※ STN4412S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS 30 Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ VGSS ID IDM ±20 6.8 5.6 30 Continuous Source Current (Diode Conduction) Power Dissipation...