STN4526 Datasheet PDF | Stanson Technology

Stanson Technology STN4526

STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching.

Part No.	STN4526
Datasheet	STN4526 Download
Manufacturer	Stanson Technology
Description	MOSFET
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DESCRIPTION

PIN CONFIGURATION SOP-8 FEATURE 40V/10.0A, RDS(ON) = 25mΩ (Typ.) @VGS = 10V 40V/8.0A, RDS(ON) = 31mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING Y: Year Code A: Process Code ORDERING INFORMATION Part Number STN4526 ※ Process Code : A ~ Z ; a ~ z Package SOP-8P STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Part Marking STN4526 Copyright © 2007, Stanson Corp. STN4526 2007. V1 STN4526 N Channel Enhancement Mode MOSFET 10.0A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ VGSS ID IDM Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature IS PD TJ Storgae Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical 40 ±20 10.0 8.0 30...