STN4536 Datasheet PDF | Stanson Technology

Stanson Technology STN4536

STN4536 is Due N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching.

Part No.	STN4536
Datasheet	STN4536 Download
Manufacturer	Stanson Technology
Description	MOSFET
Buy	Stock & Price

DESCRIPTION

PIN CONFIGURATION SOP-8 FEATURE 40V/10.0A, RDS(ON) = 25mΩ @VGS = 10V 40V/8.0A, RDS(ON) = 31mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING Y: Year Code A: Process Code B：Wafer Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2007, Stanson Corp. STN45326 2007. V1 3 STN4536 Due N Channel Enhancement Mode MOSFET 10.0A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS 40 Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ VGSS ID IDM ±20 10.0 8.0 30 Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature IS PD TJ 2.3 2.5 1.6 150 Storgae Temperature Range TSTG -55/150 Thermal Resistance-Junction to Ambient RθJA 80 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2007, Stanson Corp.