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STP601D - P-Channel Enhancement Mode MOSFET

Download the STP601D datasheet PDF. This datasheet also covers the STP601 variant, as both devices belong to the same p-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

STP601/STP601D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP601-StansonTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number STP601D
Manufacturer Stanson Technology
File Size 390.99 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet STP601D Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP601 / STP601D P Channel Enhancement Mode MOSFET -30A DESCRIPTION STP601/STP601D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP401 has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE -60V/-20.0A, RDS(ON) = 20mΩ(typ.) @VGS = -10V -60V/-20.0A, RDS(ON) = 27mΩ @VGS = -4.