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FLM3135-8F - C-Band Internally Matched FET

Description

The FLM3135-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.

SEDI's stringent Quality Assurance Program assures the highest reliability and consistent performance.

Features

  • High Output Power: P1dB = 39.5dBm (Typ. ).
  • High Gain: G1dB = 11.0dB (Typ. ).
  • High PAE: hadd = 37% (Typ. ).
  • Low IM3 = -45dBc@Po = 28.5dBm.
  • Broad Band: 3.1 to 3.5GHz.
  • Impedance Matched Zin/Zout = 50ohm.
  • Hermetically Sealed Package.

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Datasheet preview – FLM3135-8F

Datasheet Details

Part number FLM3135-8F
Manufacturer Sumitomo
File Size 464.81 KB
Description C-Band Internally Matched FET
Datasheet download datasheet FLM3135-8F Datasheet
Additional preview pages of the FLM3135-8F datasheet.

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Full PDF Text Transcription

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FLM3135-8F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 39.5dBm (Typ.) • High Gain: G1dB = 11.0dB (Typ.) • High PAE: hadd = 37% (Typ.) • Low IM3 = -45dBc@Po = 28.5dBm • Broad Band: 3.1 to 3.5GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The FLM3135-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. SEDI's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25deg.C) Item Symbol Condition Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation PT Tc = 25deg.
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