1SS88 Overview
1SS88 SILICON EPITAXIAL PLANAR DIODES.
1SS88 Key Features
- 55 to +100
- Reverse current
- Notes: 1. Failure criterion ; IR ≥ 50 µA at VR = 10 V 2. Each group shall unify a multiple of 4 diodes. 3. Not applied t
- Unit mV
1SS88 datasheet by Sunmate.
| Part number | 1SS88 |
|---|---|
| Datasheet | 1SS88-Sunmate.pdf |
| File Size | 292.09 KB |
| Manufacturer | Sunmate |
| Description | SILICON EPITAXIAL PLANAR DIODES |
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1SS88 SILICON EPITAXIAL PLANAR DIODES.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| 1SS88 | Silicon Schottky Barrier Diode | Hitachi Semiconductor | |
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1SS88 | SCHOTTKY BARRIER DIODES | EIC |
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1SS88 | Silicon Schottky Barrier Diode | Renesas |
| Part Number | Description |
|---|---|
| 1SS86 | SILICON EPITAXIAL PLANAR DIODES |
| 1SS106 | SCHOTTKY BARRIER RECTIFIER DIODES |
| 1SS108 | SILICON SCHOTTKY BARRIER DIODE |
| 1SS141 | AXIAL LEADED FAST SWITCHING DIODE |
| 1SS144 | AXIAL LEADED FAST SWITCHING DIODE |
| 1SS145 | AXIAL LEADED FAST SWITCHING DIODE |
| 1SS146 | AXIAL LEADED FAST SWITCHING DIODE |
| 1SS147 | AXIAL LEADED FAST SWITCHING DIODE |
| 1SS165 | SCHOTTKY BARRIER DIODES |
| 1SS166 | HIGH SPEED SWITHING DIODES |