1SS88 Description
1SS88 SILICON EPITAXIAL PLANAR DIODES.
1SS88 Key Features
- 55 to +100
- Reverse current
- Notes: 1. Failure criterion ; IR ≥ 50 µA at VR = 10 V 2. Each group shall unify a multiple of 4 diodes. 3. Not applied t
- Unit mV
| Part number | 1SS88 |
|---|---|
| Download | 1SS88 Datasheet (PDF) |
| File Size | 292.09 KB |
| Manufacturer | Sunmate |
| Description | SILICON EPITAXIAL PLANAR DIODES |
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| Manufacturer | Part Number | Description |
|---|---|---|
| 1SS88 | Silicon Schottky Barrier Diode | |
EIC Semiconductor |
1SS88 | SCHOTTKY BARRIER DIODES |
Renesas |
1SS88 | Silicon Schottky Barrier Diode |
1SS88 SILICON EPITAXIAL PLANAR DIODES.