Sunmate 1SS88
SILICON EPITAXIAL PLANAR DIODES
FEATURES
! Low capacitance. (C = 0.97 pF max) ! High reliability with glass seal.MECHANICAL DATA
! Case: DO-35, glass case ! Polarity: Color band denotes cathode ! Weight: 0.004 ounces, 0.13 grams DO-35(GLASS) 0.079(2.0) MAX 1.0 2(26.0) MIN. 0.165 (4.2) MAX 0.020(0.52) TYP 1.0 2(26.0) MIN. Dimensions in millimetersMAXIMUM RATINGS
andELECTRICAL CHARACTERISTICS
@ TA = 25°C unless otherwise specified Characteristic Reverse voltage Peak forward current Average rectified current Power dissipation Junction temperature Storage temperature VR IFM IO Pd Tj Tstg Symbol Value 10 35 15 150 100 −55 to +100 Unit V mA mA mW °C °C Characteristic Symbol Min Typ Forward voltage VF1 365 — VF2 520 — Reverse current IR1 — — IR2 — — Capacitance Capacitance deviation *3 Forward voltage deviation *3 C ∆C ∆VF1 — — — — — — ESD-Capability *1 ∆VF2 — — — 30 — Notes: 1. Failure criterion ; IR ≥ 50 µA at VR = 10 V 2. Each group shall unify a multiple of 4 diodes. 3. Not applied to taping-type products. Max 430 600 0.2 10 0.97 0.1 10 10 — Unit mV µA pF pF mV V Test Condition IF = 1 mA IF = 10 mA VR = 2 V VR = 10 V VR = 0 V, f = 1 MHz VR = 0 V, f = 1 MHz IF = 2.